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IRL1004SN-Channel 40 V 130A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK

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ABRmicro #.ABR2045-IRL100-1012920
ManufacturerInfineon Technologies
MPN #.IRL1004S
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetIRL1004S, IRL1004L(PDF)
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In Stock: 3
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIRL1004
Continuous Drain Current (ID) @ 25°C130A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)100 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5330 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.8W (Ta), 200W (Tc)
RDS(on) Drain-to-Source On Resistance6.5mOhm @ 78A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IRL1004S, IRL1004L
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRL1004S, manufactured by Infineon Technologies, is an N-Channel MOSFET designed for surface mounting in a D2PAK package. It supports a maximum drain-source voltage of 40V and a continuous drain current of 130A when the case temperature is controlled. The device dissipates power efficiently, with a capability of 3.8W at ambient conditions and 200W when the case is appropriately managed. The gate threshold voltage is rated at ±16V, ensuring reliable switching performance. It features a total gate charge of 5330 pF at 25V, contributing to its switching characteristics. The on-resistance is a low 6.5mOhm at 78A and 10V, which helps minimize power loss during operation.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.