IRFZ46NSTRRPBFN-Channel 55 V 53A (Tc) 3.8W (Ta), 107W (Tc) Surface Mount D2PAK
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ABRmicro #.ABR2045-IRFZ46-1014272
ManufacturerInfineon Technologies
MPN #.IRFZ46NSTRRPBF
Estimated Lead Time-
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Datasheet
IRFZ46NSPbF, IRFZ46NLPbF(PDF)
IRFZ46NSPbF, IRFZ46NLPbF(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C53A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)72 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1696 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.8W (Ta), 107W (Tc)
RDS(on) Drain-to-Source On Resistance16.5mOhm @ 28A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFZ46NSTRRPBF is a robust N-channel MOSFET manufactured by Infineon Technologies, optimized for surface mount applications in a D2PAK package. It is characterized by its ability to handle a maximum drain-to-source voltage of 55V and continuous current of 53A under specific conditions (Tc). The device has a total power dissipation capacity of 3.8W at room temperature (Ta) and 107W when properly cooled (Tc). It features a gate-source voltage tolerance of ±20V and operates efficiently with a gate-source voltage of 10V. Additionally, the MOSFET exhibits an input capacitance of 1696 pF at a test voltage of 25V, contributing to its performance in various electronic circuits.
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