IRFZ46NLN-Channel 55 V 53A (Tc) 3.8W (Ta), 107W (Tc) Through Hole TO-262
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ABRmicro #.ABR2045-IRFZ46-939811
ManufacturerInfineon Technologies
MPN #.IRFZ46NL
Estimated Lead Time-
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Datasheet
IRFZ46NS/NL(PDF)
IRFZ46NS/NL(PDF)
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Packaging
Tube
Shipping DateNovember 15, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C53A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)72 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1696 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.8W (Ta), 107W (Tc)
RDS(on) Drain-to-Source On Resistance16.5mOhm @ 28A, 10V
Package Type (Mfr.)TO-262
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFZ46NL is an N-Channel MOSFET manufactured by Infineon Technologies, designed for use in various electronic circuits. This component is housed in a TO-262 package and is capable of handling voltages up to 55V and currents up to 53A when at optimal thermal conditions (as indicated by the current rating at case temperature, Tc). It exhibits a maximum power dissipation of 3.8W in free air (Ta) and 107W when mounted using proper thermal management (Tc). The device demonstrates a low on-state resistance of 16.5 milliohms at 10V gate-to-source voltage and a drain current of 28A, making it efficient for switching applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.