IRFZ44NLN-Channel 55 V 49A (Tc) 3.8W (Ta), 94W (Tc) Through Hole TO-262
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ABRmicro #.ABR2045-IRFZ44-1000015
ManufacturerInfineon Technologies
MPN #.IRFZ44NL
Estimated Lead Time-
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Datasheet
IRFZ44NS/NL(PDF)
IRFZ44NS/NL(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C49A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)63 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1470 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.8W (Ta), 94W (Tc)
RDS(on) Drain-to-Source On Resistance17.5mOhm @ 25A, 10V
Package Type (Mfr.)TO-262
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFZ44NL, manufactured by Infineon Technologies, is a discrete N-Channel MOSFET designed for medium power applications. Encased in a TO-262 package, it is suitable for through-hole mounting. This MOSFET can handle a maximum drain current of 49A when the case temperature is controlled, and a maximum power dissipation of 94W under similar conditions. It features a breakdown voltage of 55V and has a gate charge of 63 nC measured at 10V. Additionally, the input capacitance of this part is 1470 pF at 25V, which reflects its capacity to handle changes in input signal frequencies efficiently.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.