IRFZ34NSTRRN-Channel 55 V 29A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK
N/A
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ABRmicro #.ABR2045-IRFZ34-972126
ManufacturerInfineon Technologies
MPN #.IRFZ34NSTRR
Estimated Lead Time-
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Datasheet
IRFZ34NS/L(PDF)
IRFZ34NS/L(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C29A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)34 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)700 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.8W (Ta), 68W (Tc)
RDS(on) Drain-to-Source On Resistance40mOhm @ 16A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFZ34NSTRR, manufactured by Infineon Technologies, is an N-channel MOSFET designed for surface mount applications, housed in a D2PAK package. It can handle a drain-source voltage of up to 55V and a continuous current of 29A when measured at the case (Tc). The part has power dissipation capabilities of 3.8W at ambient temperature (Ta) and up to 68W at Tc. With a gate charge of 34 nC at 10V, it is designed for efficient switching, while offering a maximum gate-source voltage rating of ±20V.
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