IRFZ34NLN-Channel 55 V 29A (Tc) 3.8W (Ta), 68W (Tc) Through Hole TO-262
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ABRmicro #.ABR2045-IRFZ34-938417
ManufacturerInfineon Technologies
MPN #.IRFZ34NL
Estimated Lead Time-
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Datasheet
IRFZ34NS/L(PDF)
IRFZ34NS/L(PDF)
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Packaging
Tube
Shipping DateNovember 15, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C29A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)34 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)700 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.8W (Ta), 68W (Tc)
RDS(on) Drain-to-Source On Resistance40mOhm @ 16A, 10V
Package Type (Mfr.)TO-262
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFZ34NL is an N-Channel MOSFET manufactured by Infineon Technologies, designed for efficient power switching applications. It operates with a maximum drain-source voltage of 55 V and can handle a continuous current of 29A when mounted on a case. This through-hole component is housed in a TO-262 package and features a maximum power dissipation of 68W under specific conditions. The MOSFET offers a low on-resistance of 40 milliohms when driving 16A at a gate-source voltage of 10V, making it suitable for various power management and control tasks.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.