IRFZ34EPBFN-Channel 60 V 28A (Tc) 68W (Tc) Through Hole TO-220AB
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ABRmicro #.ABR2045-IRFZ34-1007398
ManufacturerInfineon Technologies
MPN #.IRFZ34EPBF
Estimated Lead Time-
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Datasheet
IRFZ34EPbF(PDF)
IRFZ34EPbF(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C28A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)30 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)680 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation68W (Tc)
RDS(on) Drain-to-Source On Resistance42mOhm @ 17A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFZ34EPBF is an N-Channel MOSFET transistor manufactured by Infineon Technologies. It is designed for through-hole mounting in a TO-220AB package. This component can handle a continuous drain current of up to 28A and a maximum power dissipation of 68W when measured at the case (Tc). The device operates with a maximum drain-source voltage of 60V and features a gate threshold voltage of 10V. Additionally, it exhibits a total gate charge of 30 nC at 10V, making it suitable for various switching applications where efficient performance is needed. Overall, the IRFZ34EPBF offers solid electrical characteristics for its standard applications.
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