IRFU4105ZN-Channel 55 V 30A (Tc) 48W (Tc) Through Hole IPAK (TO-251AA)
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ABRmicro #.ABR2045-IRFU41-977092
ManufacturerInfineon Technologies
MPN #.IRFU4105Z
Estimated Lead Time-
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Datasheet
IRFR4105Z, IRFU4105Z(PDF)
IRFR4105Z, IRFU4105Z(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C30A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)27 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)740 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation48W (Tc)
RDS(on) Drain-to-Source On Resistance24.5mOhm @ 18A, 10V
Package Type (Mfr.)IPAK (TO-251AA)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFU4105Z, manufactured by Infineon Technologies, is a N-channel MOSFET designed for handling medium power loads. It operates at a maximum voltage of 55 V and can carry a continuous current of 30A when mounted on a proper heatsink. Packaged in a compact IPAK (TO-251AA) through-hole configuration, it offers a power dissipation of 48W. The MOSFET exhibits a total gate charge of 27 nC at a gate-source voltage of 10 V and features an on-state resistance of 24.5 mOhm at 18A with a gate voltage of 10V. Its threshold voltage is specified at 4V for a drain current of 250µA.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.