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IRFU3708N-Channel 30 V 61A (Tc) 87W (Tc) Through Hole IPAK (TO-251AA)

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ABRmicro #.ABR2045-IRFU37-995340
MPN #.IRFU3708
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In Stock: 8
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Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C61A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2.8V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)24 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2417 pF @ 15 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation87W (Tc)
RDS(on) Drain-to-Source On Resistance12.5mOhm @ 15A, 10V
Package Type (Mfr.)IPAK (TO-251AA)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±12V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFU3708 is a power MOSFET manufactured by Infineon Technologies, designed as an N-channel device operating at 30V with a 61A maximum current rating when conditions at the case (Tc) are optimized. It supports a power dissipation of up to 87W under these conditions. The MOSFET is presented in a Through Hole IPAK (TO-251AA) package which is suitable for efficient thermal management. With an on-resistance of 12.5 mOhms at 15A and 10V, the component demonstrates low conduction losses. It features a total gate charge of 24 nC at 4.5 V, ensuring manageable switching characteristics, and has a threshold voltage of 2V at 250µA, indicating the gate voltage required to begin channel conduction.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.