IRFU3410PBFN-Channel 100 V 31A (Tc) 3W (Ta), 110W (Tc) Through Hole IPAK (TO-251AA)
1:$0.9480
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ABRmicro #.ABR2045-IRFU34-950635
ManufacturerInfineon Technologies
MPN #.IRFU3410PBF
Estimated Lead Time-
SampleGet Free Sample
Datasheet
IRFR3410, IRFU3410(PDF)
IRFR3410, IRFU3410(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.9480
Ext. Price$ 0.9480
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.9480$0.9480
75$0.7590$56.8970
150$0.6010$90.2060
525$0.5090$267.1920
1050$0.4150$436.2090
2025$0.3900$789.6230
5025$0.3720$1868.6720
10050$0.3550$3566.4940
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberIRFU3410
Continuous Drain Current (ID) @ 25°C31A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)56 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1690 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3W (Ta), 110W (Tc)
RDS(on) Drain-to-Source On Resistance39mOhm @ 18A, 10V
Package Type (Mfr.)IPAK (TO-251AA)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFU3410PBF is an N-Channel MOSFET produced by Infineon Technologies. It is designed to handle a maximum drain-source voltage of 100 V and a continuous drain current of 31A in suitable conditions when mounted properly, with a power dissipation of 110W at the case (Tc) and 3W at the ambient (Ta). It features a low on-resistance of 39 milliohms at a gate-source voltage of 10V and a drain current of 18A, and has an input capacitance of 1690 pF when measured at 25 volts. The gate threshold voltage is specified as 4V at a gate current of 250 microamperes. This component is provided in an IPAK (TO-251AA) through-hole package for ease of mounting and thermal management.
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