IRFU220NN-Channel 200 V 5A (Tc) 43W (Tc) Through Hole IPAK (TO-251AA)
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ABRmicro #.ABR2045-IRFU22-1004026
ManufacturerInfineon Technologies
MPN #.IRFU220N
Estimated Lead Time-
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Datasheet
IRFR220N, IRFU220N(PDF)
IRFR220N, IRFU220N(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C5A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)23 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)300 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation43W (Tc)
RDS(on) Drain-to-Source On Resistance600mOhm @ 2.9A, 10V
Package Type (Mfr.)IPAK (TO-251AA)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFU220N is a power transistor manufactured by Infineon Technologies, designed as an N-Channel MOSFET. It operates at a maximum voltage of 200 V and can handle a continuous current of up to 5 amperes, with a power dissipation capacity of 43 watts when mounted to a heat sink. The device is housed in a compact Through Hole IPAK (TO-251AA) package, making it suitable for efficient space utilization on circuit boards. With a threshold voltage of 4 volts at 250 microamps and a gate charge of 23 nanocoulombs at 10 volts, the IRFU220N offers efficient switching performance, which is critical in various electronic applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.