IRFU120NPBFN-Channel 100 V 9.4A (Tc) 48W (Tc) Through Hole IPAK (TO-251AA)
1:$0.5460
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ABRmicro #.ABR2045-IRFU12-1015596
ManufacturerInfineon Technologies
MPN #.IRFU120NPBF
Estimated Lead Time10 Weeks
SampleGet Free Sample
Datasheet
IRFR/U120NPbF(PDF)
IRFR/U120NPbF(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.5460
Ext. Price$ 0.5460
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.5460$0.5460
75$0.4550$34.1060
150$0.3300$49.5660
525$0.2760$145.0310
1050$0.2580$271.0970
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIRFU120
Continuous Drain Current (ID) @ 25°C9.4A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)25 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)330 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation48W (Tc)
RDS(on) Drain-to-Source On Resistance210mOhm @ 5.6A, 10V
Package Type (Mfr.)IPAK (TO-251AA)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
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PCN Design/Specification
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFU120NPBF is a robust N-Channel MOSFET manufactured by Infineon Technologies, designed for efficient power management. This component can handle a continuous current of 9.4A and a power dissipation of 48W when mounted through a heatsinked IPAK (TO-251AA) package. Operating at a maximum drain-source voltage of 100V, it features a low on-resistance of 210mOhm at a gate-source voltage of 10V, supporting a drain current of 5.6A. It also allows for a gate threshold voltage between ±20V, enabling versatile operation in various electronic circuits.
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