IRFU1010ZN-Channel 55 V 42A (Tc) 140W (Tc) Through Hole IPAK (TO-251AA)
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ABRmicro #.ABR2045-IRFU10-1024177
ManufacturerInfineon Technologies
MPN #.IRFU1010Z
Estimated Lead Time-
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Datasheet
IRFR1010Z, IRFU1010Z(PDF)
IRFR1010Z, IRFU1010Z(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C42A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)95 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2840 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation140W (Tc)
RDS(on) Drain-to-Source On Resistance7.5mOhm @ 42A, 10V
Package Type (Mfr.)IPAK (TO-251AA)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 100µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFU1010Z is an N-Channel MOSFET manufactured by Infineon Technologies. Designed for through-hole mounting, this component is housed in an IPAK (TO-251AA) package, allowing for efficient thermal management. It features a drain-source voltage rating of 55V and can handle a continuous current of 42A at Tc conditions, offering a power dissipation capability of up to 140W. With a low on-state resistance of 7.5mOhm at 42A and a gate-source voltage rating of ±20V, this MOSFET is well-suited for high-efficiency switching applications, where low resistance and robust voltage tolerance are essential.
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