IRFSL7730PBFN-Channel 75 V 195A (Tc) 375W (Tc) Through Hole TO-262
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ABRmicro #.ABR2045-IRFSL7-955688
ManufacturerInfineon Technologies
MPN #.IRFSL7730PBF
Estimated Lead Time-
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Datasheet
IRF(B,S,SL)7730PbF(PDF)
IRF(B,S,SL)7730PbF(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®, StrongIRFET™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIRFSL7730
Continuous Drain Current (ID) @ 25°C195A (Tc)
Drain-to-Source Voltage (VDS)75 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)407 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)13660 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation375W (Tc)
RDS(on) Drain-to-Source On Resistance2.6mOhm @ 100A, 10V
Package Type (Mfr.)TO-262
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.7V @ 250µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFSL7730PBF is a high-performance N-Channel MOSFET developed by Infineon Technologies. It features a maximum drain-source voltage of 75V and is capable of handling up to 195A at a case temperature. With a power dissipation of 375W, it is housed in a TO-262 package, making it suitable for through-hole mounting. This MOSFET exhibits a total gate charge of 407 nC at 10V and gate threshold voltages of 6V and 10V, highlighting its efficient switching capabilities.
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