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IRFSL7534PBFN-Channel 60 V 195A (Tc) 294W (Tc) Surface Mount TO-262
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ABRmicro #.ABR2045-IRFSL7-967611
ManufacturerInfineon Technologies
MPN #.IRFSL7534PBF
Estimated Lead Time-
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DatasheetIRF(B,S,SL)7534PbF(PDF)
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Shipping DateNovember 16, 2024
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SeriesHEXFET®, StrongIRFET™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIRFSL7534
Continuous Drain Current (ID) @ 25°C195A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)279 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)10034 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation294W (Tc)
RDS(on) Drain-to-Source On Resistance2.4mOhm @ 100A, 10V
Package Type (Mfr.)TO-262
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.7V @ 250µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFSL7534PBF is an N-Channel MOSFET manufactured by Infineon Technologies, designed for surface-mount applications with a TO-262 package. It features a drain-source voltage rating of 60 V and can handle a continuous current of up to 195A at its case temperature rating. The device also supports a maximum power dissipation of 294W. Its gate-to-source voltage is rated at ±20V, ensuring robust gate drive capability. The MOSFET has an input capacitance of 10034 pF at 25 V and a total gate charge of 279 nC at 10 V, indicating its switching characteristics. These specifications make it suitable for scenarios requiring high current and low on-state resistance.
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