IRFSL7530PBFN-Channel 60 V 195A (Tc) 375W (Tc) Surface Mount TO-262
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ABRmicro #.ABR2045-IRFSL7-981766
ManufacturerInfineon Technologies
MPN #.IRFSL7530PBF
Estimated Lead Time-
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Datasheet
IRF(B,S,SL)7530PbF(PDF)
IRF(B,S,SL)7530PbF(PDF)
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Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®, StrongIRFET™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIRFSL7530
Continuous Drain Current (ID) @ 25°C195A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)411 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)13703 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation375W (Tc)
RDS(on) Drain-to-Source On Resistance2mOhm @ 100A, 10V
Package Type (Mfr.)TO-262
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.7V @ 250µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFSL7530PBF is an N-Channel MOSFET manufactured by Infineon Technologies, featuring a voltage rating of 60V and a current rating of 195A under certain conditions (Tc). Encased in a surface mount TO-262 package, it is capable of dissipating 375W of power with optimal thermal management. This MOSFET exhibits a low on-resistance of 2mOhm at 100A and 10V, which is critical for minimizing power loss in high-current applications. Additionally, it has a gate-to-drain charge capacitance of 13703 pF at 25 V, influencing its switching characteristics.
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