IRFSL7440PBFN-Channel 40 V 120A (Tc) 208W (Tc) Through Hole TO-262
1:$0.9740
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ABRmicro #.ABR2045-IRFSL7-928693
ManufacturerInfineon Technologies
MPN #.IRFSL7440PBF
Estimated Lead Time12 Weeks
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Datasheet
IRFS(L)7440PbF(PDF)
IRFS(L)7440PbF(PDF)
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Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 0.9740
Ext. Price$ 0.9740
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.9740$0.9740
10$0.8130$8.1280
100$0.6470$64.7060
500$0.5830$291.6560
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®, StrongIRFET™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIRFSL7440
Continuous Drain Current (ID) @ 25°C120A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)135 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4730 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation208W (Tc)
RDS(on) Drain-to-Source On Resistance2.5mOhm @ 100A, 10V
Package Type (Mfr.)TO-262
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.9V @ 100µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Datasheets
Environmental Information
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PCN Design/Specification
PCN Packaging
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFSL7440PBF by Infineon Technologies is a robust N-channel MOSFET designed for efficiency in high-current applications. It can handle a drain-source voltage of up to 40 V and supports a continuous drain current of 120 A at a case temperature. The component efficiently dissipates power with a maximum power dissipation of 208 W under standard conditions. Housed in a TO-262 package for through-hole mounting, this MOSFET has a low on-state resistance of just 2.5 milliohms when conducting 100 A with a gate-source voltage of 10 V, enabling high-efficiency operation. The threshold voltage stands at 3.9 V when a drain current of 100 µA is present.
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