IRFSL3607PBFN-Channel 75 V 80A (Tc) 140W (Tc) Through Hole TO-262
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ABRmicro #.ABR2045-IRFSL3-953058
ManufacturerInfineon Technologies
MPN #.IRFSL3607PBF
Estimated Lead Time-
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Datasheet
IRFS3607PBF Datasheet(PDF)
IRFS3607PBF Datasheet(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C80A (Tc)
Drain-to-Source Voltage (VDS)75 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)84 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3070 pF @ 50 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation140W (Tc)
RDS(on) Drain-to-Source On Resistance9mOhm @ 46A, 10V
Package Type (Mfr.)TO-262
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 100µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFSL3607PBF is a robust N-Channel power MOSFET manufactured by Infineon Technologies, designed to handle significant power levels. It operates with a voltage rating of 75V and can support a continuous current of up to 80A at the case. The device features a high power dissipation rating of 140W, making it suitable for demanding environments. Encased in a TO-262 package for through-hole mounting, the MOSFET offers a gate charge of 84 nC at 10V and a threshold voltage of 4V at 100µA, facilitating efficient switching performance.
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