IRFSL3306PBFN-Channel 60 V 120A (Tc) 230W (Tc) Through Hole TO-262
1:$1.7470
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ABRmicro #.ABR2045-IRFSL3-1029432
ManufacturerInfineon Technologies
MPN #.IRFSL3306PBF
Estimated Lead Time12 Weeks
SampleGet Free Sample
Datasheet
IRF(B,S,SL)3306PbF(PDF)
IRF(B,S,SL)3306PbF(PDF)
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Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 1.7470
Ext. Price$ 1.7470
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
50$1.7470$87.3380
100$1.4380$143.7560
250$1.4010$350.3590
500$1.2160$607.7500
1250$1.0320$1289.6090
2500$0.9810$2451.7190
5000$0.9440$4717.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIRFSL3306
Continuous Drain Current (ID) @ 25°C120A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)120 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4520 pF @ 50 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation230W (Tc)
RDS(on) Drain-to-Source On Resistance4.2mOhm @ 75A, 10V
Package Type (Mfr.)TO-262
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 150µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Datasheets
Environmental Information
Other Related Documents
PCN Design/Specification
PCN Packaging
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFSL3306PBF is an N-channel power MOSFET manufactured by Infineon Technologies, designed for high-performance applications requiring efficient power handling. It features a drain-to-source voltage rating of 60 volts and can handle continuous current up to 120 amperes under specified conditions, while dissipating up to 230 watts of power. Housed in a TO-262 package for through-hole mounting, this MOSFET includes a gate threshold voltage of 4 volts at 150 microamperes and a total gate charge of 120 nanocoulombs at a 10-volt drive voltage, making it suitable for use in various electronic circuits requiring reliable switching performance.
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