IRFSL3207ZPBFN-Channel 75 V 120A (Tc) 300W (Tc) Through Hole TO-262
1:$2.0340
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ABRmicro #.ABR2045-IRFSL3-1016782
ManufacturerInfineon Technologies
MPN #.IRFSL3207ZPBF
Estimated Lead Time12 Weeks
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Datasheet
IRFB3207ZPbF, IRFS(L)3207ZPbF(PDF)
IRFB3207ZPbF, IRFS(L)3207ZPbF(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.0340
Ext. Price$ 2.0340
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.0340$2.0340
50$1.6140$80.6970
100$1.3830$138.3380
500$1.3530$676.2810
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIRFSL3207
Continuous Drain Current (ID) @ 25°C120A (Tc)
Drain-to-Source Voltage (VDS)75 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)170 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6920 pF @ 50 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation300W (Tc)
RDS(on) Drain-to-Source On Resistance4.1mOhm @ 75A, 10V
Package Type (Mfr.)TO-262
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 150µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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PCN Design/Specification
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFSL3207ZPBF, manufactured by Infineon Technologies, is a high-power N-channel MOSFET designed for efficient power handling. It boasts a breakdown voltage of 75 V and a continuous drain current of 120A when mounted on a suitable heatsink. The device can dissipate up to 300W of power in optimal thermal conditions. Housed in a TO-262 package, it features gate-source voltage ratings of ±20V and a gate charge capacity of 6920 pF at 50 V, making it suitable for high-frequency switching applications. Its robust design ensures reliable performance in demanding electrical environments.
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