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IRFSL3107PBFN-Channel 75 V 195A (Tc) 370W (Tc) Through Hole TO-262
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ABRmicro #.ABR2045-IRFSL3-997160
ManufacturerInfineon Technologies
MPN #.IRFSL3107PBF
Estimated Lead Time-
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DatasheetIRFS(L)3107PBF(PDF)
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In Stock: 16
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Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIRFSL3107
Continuous Drain Current (ID) @ 25°C195A (Tc)
Drain-to-Source Voltage (VDS)75 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)240 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)9370 pF @ 50 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation370W (Tc)
RDS(on) Drain-to-Source On Resistance3mOhm @ 140A, 10V
Package Type (Mfr.)TO-262
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFSL3107PBF is a power MOSFET manufactured by Infineon Technologies, designed with an N-channel configuration. It is capable of handling up to 75 volts and can conduct a continuous current of 195 amperes under specified conditions. This component has a thermal power dissipation rating of 370 watts when mounted on an appropriate heatsink. It comes in a TO-262 through-hole package, facilitating easy integration into circuit designs. The gate threshold is specified at 10V with a maximum gate-to-source voltage of ±20V. Additionally, it features an input capacitance of 9370 pF at a 50V measurement, making it suitable for high-power applications where efficiency and reliability are important.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.