IRFS7730TRLPBFN-Channel 75 V 195A (Tc) 375W (Tc) Surface Mount TO-263AB (D2PAK)
1:$2.7100
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ABRmicro #.ABR2045-IRFS77-1037446
ManufacturerInfineon Technologies
MPN #.IRFS7730TRLPBF
Estimated Lead Time12 Weeks
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Datasheet
IRF(B,S,SL)7730PbF(PDF)
IRF(B,S,SL)7730PbF(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 2.7100
Ext. Price$ 2.7100
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Price Gradients
Qty.Unit PriceExt. Price
1$2.7100$2.7100
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesHEXFET®, StrongIRFET™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIRFS7730
Continuous Drain Current (ID) @ 25°C195A (Tc)
Drain-to-Source Voltage (VDS)75 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)407 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)13660 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation375W (Tc)
RDS(on) Drain-to-Source On Resistance2.6mOhm @ 100A, 10V
Package Type (Mfr.)TO-263AB (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.7V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Environmental Information
Other Related Documents
PCN Design/Specification
PCN Packaging
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFS7730TRLPBF is an N-Channel MOSFET manufactured by Infineon Technologies, designed for high-performance power management applications. It operates with a maximum voltage of 75V and can deliver up to 195A current at the case temperature, with a power dissipation of up to 375W. The component features a TO-263AB (D2PAK) surface mount package, facilitating efficient heat dissipation and compact integration in circuit designs. It has a gate-source voltage rating of ±20V and boasts a total gate charge of 407 nC at 10V, making it suitable for high-speed switching. Additionally, the gate threshold voltage can operate between 6V and 10V, providing flexibility in drive voltage selection.
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