IRFS7730PBFN-Channel 75 V 195A (Tc) 375W (Tc) Surface Mount TO-263AB (D2PAK)
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ABRmicro #.ABR2045-IRFS77-1034758
ManufacturerInfineon Technologies
MPN #.IRFS7730PBF
Estimated Lead Time-
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Datasheet
IRF(B,S,SL)7730PbF(PDF)
IRF(B,S,SL)7730PbF(PDF)
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Shipping DateNovember 17, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®, StrongIRFET™
Packaging
Tube
Lifecycle StatusObsolescence Review In Progress
Continuous Drain Current (ID) @ 25°C195A (Tc)
Drain-to-Source Voltage (VDS)75 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)407 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)13660 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation375W (Tc)
RDS(on) Drain-to-Source On Resistance2.6mOhm @ 100A, 10V
Package Type (Mfr.)TO-263AB (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.7V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFS7730PBF is a surface mount N-Channel MOSFET manufactured by Infineon Technologies, housed in a TO-263AB (D2PAK) package. It is designed to handle a maximum voltage of 75V and a continuous current of 195A at a case temperature, with a power dissipation capability of 375W. The device exhibits a capacitance of 13,660 pF when measured at 25V, with a low on-resistance of 2.6 mOhm at 100A and 10V. It features a gate threshold voltage of 3.7V at a gate current of 250µA, making it suitable for high-efficiency power management applications.
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