IRFS7434TRLPBFN-Channel 40 V 195A (Tc) 294W (Tc) Surface Mount D2PAK
1:$2.2820
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ABRmicro #.ABR2045-IRFS74-939208
ManufacturerInfineon Technologies
MPN #.IRFS7434TRLPBF
Estimated Lead Time12 Weeks
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Datasheet
IRFS(L)7434PbF(PDF)
IRFS(L)7434PbF(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 2.2820
Ext. Price$ 2.2820
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.2820$2.2820
10$1.8930$18.9340
100$1.5070$150.6630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesHEXFET®, StrongIRFET™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIRFS7434
Continuous Drain Current (ID) @ 25°C195A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)324 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)10820 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation294W (Tc)
RDS(on) Drain-to-Source On Resistance1.6mOhm @ 100A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.9V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Environmental Information
Other Related Documents
PCN Design/Specification
PCN Packaging
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFS7434TRLPBF is a high-performance N-channel MOSFET manufactured by Infineon Technologies. It is designed to handle a maximum drain-source voltage of 40V and a continuous drain current of up to 195A when appropriately cooled, with a power dissipation capability reaching 294W. Encased in a D2PAK surface-mount package, this component offers low on-resistance of 1.6 mOhm at 10V and 100A, making it efficient in reducing conduction losses. The MOSFET also features a total gate charge of 324 nC at 10V and input capacitance of 10820 pF at 25V, which contributes to its rapid switching performance. Its robust design and efficient electrical characteristics make it suitable for high-current and high-efficiency applications.
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