IRFS5620TRLPBFN-Channel 200 V 24A (Tc) 144W (Tc) Surface Mount D2PAK
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ABRmicro #.ABR2045-IRFS56-991635
ManufacturerInfineon Technologies
MPN #.IRFS5620TRLPBF
Estimated Lead Time-
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Datasheet
IRFS(L)5620(PDF)
IRFS(L)5620(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C24A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)38 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1710 pF @ 50 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation144W (Tc)
RDS(on) Drain-to-Source On Resistance77.5mOhm @ 15A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 100µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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PCN Design/Specification
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFS5620TRLPBF is an N-channel MOSFET manufactured by Infineon Technologies, designed for high-efficiency power management applications. It features a maximum drain-source voltage of 200V and can handle a continuous current of 24A when mounted on a suitable heatsink. The component supports a power dissipation of up to 144W. Packaged in a D2PAK surface-mount form factor, it offers efficient thermal performance. This MOSFET has a gate threshold voltage of 5V at a gate current of 100µA and is capable of withstanding gate-source voltages up to ±20V. It has a low on-resistance of 77.5mOhms at a current of 15A and a gate voltage of 10V, making it suitable for applications requiring efficient power conversion and distribution.
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