IRFS5615PBFN-Channel 150 V 33A (Tc) 144W (Tc) Surface Mount D2PAK
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ABRmicro #.ABR2045-IRFS56-997367
ManufacturerInfineon Technologies
MPN #.IRFS5615PBF
Estimated Lead Time-
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Datasheet
IRFS(L)5615PBF(PDF)
IRFS(L)5615PBF(PDF)
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Tube
Shipping DateNovember 16, 2024
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Series-
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C33A (Tc)
Drain-to-Source Voltage (VDS)150 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)40 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1750 pF @ 50 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation144W (Tc)
RDS(on) Drain-to-Source On Resistance42mOhm @ 21A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 100µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFS5615PBF is an N-channel metal-oxide-semiconductor field-effect transistor (MOSFET) manufactured by Infineon Technologies. Designed for surface mount applications, this component is housed in a D2PAK package and can handle a maximum voltage of 150 V. It has a current rating of 33A under certain conditions (Tc), and it can dissipate up to 144W of power, provided the case temperature is properly managed. The MOSFET features a capacitance of 1750 pF at 50 V and operates efficiently with a gate threshold of 10V. These specifications make it suitable for demanding electronic circuit requirements where reliable and robust switching performance is essential.
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