IRFS4410ZTRLPBFN-Channel 100 V 97A (Tc) 230W (Tc) Surface Mount PG-TO263-3
1:$1.6410
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ABRmicro #.ABR2045-IRFS44-952937
ManufacturerInfineon Technologies
MPN #.IRFS4410ZTRLPBF
Estimated Lead Time12 Weeks
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Datasheet
IRF(B,S,SL)4410ZPBF(PDF)
IRF(B,S,SL)4410ZPBF(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.6410
Ext. Price$ 1.6410
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.6410$1.6410
10$1.3630$13.6320
100$1.0840$108.3750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIRFS4410
Continuous Drain Current (ID) @ 25°C97A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)120 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4820 pF @ 50 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation230W (Tc)
RDS(on) Drain-to-Source On Resistance9mOhm @ 58A, 10V
Package Type (Mfr.)PG-TO263-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 150µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Environmental Information
Other Related Documents
PCN Design/Specification
PCN Packaging
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFS4410ZTRLPBF is an N-channel MOSFET manufactured by Infineon Technologies, designed for surface mounting in a PG-TO263-3 package. It is capable of handling a maximum voltage of 100 V and can support a drain current of up to 97A at the case temperature (Tc). The component can dissipate power up to 230W, also at Tc. This MOSFET presents a gate charge of 4820 pF at 50V and a gate-source voltage range of ±20V, making it suitable for various applications that require efficient switching and power handling capabilities.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.