IRFS4321TRLPBFN-Channel 150 V 85A (Tc) 350W (Tc) Surface Mount D2PAK
1:$3.0180
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ABRmicro #.ABR2045-IRFS43-967871
ManufacturerInfineon Technologies
MPN #.IRFS4321TRLPBF
Estimated Lead Time12 Weeks
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Datasheet
IRFS(L)4321PbF(PDF)
IRFS(L)4321PbF(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 3.0180
Ext. Price$ 3.0180
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$3.0180$3.0180
10$2.5330$25.3300
100$2.0500$204.9560
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIRFS4321
Continuous Drain Current (ID) @ 25°C85A (Tc)
Drain-to-Source Voltage (VDS)150 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)110 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4460 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation350W (Tc)
RDS(on) Drain-to-Source On Resistance15mOhm @ 33A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Environmental Information
Other Related Documents
PCN Design/Specification
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFS4321TRLPBF is a high-performance N-channel MOSFET developed by Infineon Technologies, featuring a maximum voltage rating of 150 V and a continuous current rating of 85A under controlled conditions. Designed for surface mount applications, it utilizes the D2PAK package to ensure effective thermal management, supporting a power dissipation capability of up to 350W. This MOSFET offers a low on-resistance of 15mOhm at a gate-source voltage of 10V and a current of 33A, contributing to minimized conduction losses. With a gate charge of 110 nC at 10 V, it is optimized for efficient switching performance, requiring a gate threshold voltage of 5V at 250µA to operate effectively.
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