IRFS4229TRLPBFN-Channel 250 V 45A (Tc) 330W (Tc) Surface Mount PG-TO263-3
1:$3.6510
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ABRmicro #.ABR2045-IRFS42-960007
ManufacturerInfineon Technologies
MPN #.IRFS4229TRLPBF
Estimated Lead Time12 Weeks
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Datasheet
IRFS4229PBF(PDF)
IRFS4229PBF(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 3.6510
Ext. Price$ 3.6510
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$3.6510$3.6510
10$3.0670$30.6740
100$2.4810$248.0940
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIRFS4229
Continuous Drain Current (ID) @ 25°C45A (Tc)
Drain-to-Source Voltage (VDS)250 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)110 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4560 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 175°C (TJ)
Maximum Power Dissipation330W (Tc)
RDS(on) Drain-to-Source On Resistance48mOhm @ 26A, 10V
Package Type (Mfr.)PG-TO263-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Environmental Information
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFS4229TRLPBF is a high-performance power MOSFET manufactured by Infineon Technologies. It features an N-channel with a breakdown voltage of 250 volts and a continuous drain current of 45 amperes when measured at the case (Tc). This component is capable of handling up to 330 watts of power dissipation under optimal conditions. Housed in a compact PG-TO263-3 package designed for surface mounting, it enables efficient thermal management and space-saving configurations. The MOSFET operates with a gate-source voltage threshold of 5 volts at a gate current of 250 microamperes and exhibits an on-state resistance of 48 milliohms at a drain current of 26 amperes and a gate-source voltage of 10 volts. Additionally, it can withstand gate-source voltages up to ±30 volts, making it suitable for demanding electronic applications.
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