IRFS41N15DPBFN-Channel 150 V 41A (Tc) 3.1W (Ta) Surface Mount D2PAK
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ABRmicro #.ABR2045-IRFS41-1025386
ManufacturerInfineon Technologies
MPN #.IRFS41N15DPBF
Estimated Lead Time-
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IRF(I)B / IRFS(L)_41N15DPbF(PDF)
IRF(I)B / IRFS(L)_41N15DPbF(PDF)
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Shipping DateNovember 17, 2024
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SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolescence Review In Progress
Continuous Drain Current (ID) @ 25°C41A (Tc)
Drain-to-Source Voltage (VDS)150 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)110 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2520 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.1W (Ta)
RDS(on) Drain-to-Source On Resistance45mOhm @ 25A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5.5V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFS41N15DPBF by Infineon Technologies is a surface-mount N-Channel MOSFET housed in a D2PAK package. Designed to handle up to 150 volts and 41 amperes under case conditions, it incorporates a low on-resistance of 45 milliohms at 25A and 10V, minimizing power losses. It requires a gate-to-source voltage of 5.5 volts at 250 microamperes and features a total gate charge of 110 nanocoulombs at 10 volts, enabling efficient switching performance. With a thermal power dissipation of 3.1 watts in ambient conditions, it is suitable for applications requiring robust and reliable power management in compact form factors.
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