IRFS3607TRLPBFN-Channel 75 V 80A (Tc) 140W (Tc) Surface Mount D2PAK
1:$1.2990
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IRFS36-940006
ManufacturerInfineon Technologies
MPN #.IRFS3607TRLPBF
Estimated Lead Time12 Weeks
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Datasheet
IRFS3607PBF Datasheet(PDF)
IRFS3607PBF Datasheet(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 1.2990
Ext. Price$ 1.2990
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.2990$1.2990
10$1.0610$10.6140
100$0.8260$82.5560
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIRFS3607
Continuous Drain Current (ID) @ 25°C80A (Tc)
Drain-to-Source Voltage (VDS)75 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)84 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3070 pF @ 50 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation140W (Tc)
RDS(on) Drain-to-Source On Resistance9mOhm @ 46A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 100µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Environmental Information
Other Related Documents
PCN Design/Specification
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFS3607TRLPBF is a semiconductor device manufactured by Infineon Technologies, featuring a robust N-Channel MOSFET design. It is capable of supporting a maximum voltage of 75V and can handle continuous currents up to 80A, making it suitable for high-power operations. The MOSFET has a low on-resistance of 9 milliohms when driven at 46A and 10V, which enhances its efficiency by minimizing power loss. It also features a total gate charge of 84 nC at 10V, and an input capacitance of 3070 pF at 50V. This part is housed in a D2PAK surface mount package, allowing for efficient thermal management with a power dissipation capability of 140W when appropriately mounted.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.