IRFS3307ZTRRPBFN-Channel 75 V 120A (Tc) 230W (Tc) Surface Mount TO-263 (D2PAK)
1:$2.3940
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ABRmicro #.ABR2045-IRFS33-1013905
ManufacturerInfineon Technologies
MPN #.IRFS3307ZTRRPBF
Estimated Lead Time12 Weeks
SampleGet Free Sample
Datasheet
IRF(B/S/SL)3307ZPbF(PDF)
IRF(B/S/SL)3307ZPbF(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.3940
Ext. Price$ 2.3940
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.3940$2.3940
10$2.0090$20.0920
100$1.6250$162.4560
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIRFS3307
Continuous Drain Current (ID) @ 25°C120A (Tc)
Drain-to-Source Voltage (VDS)75 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)110 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4750 pF @ 50 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation230W (Tc)
RDS(on) Drain-to-Source On Resistance5.8mOhm @ 75A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 150µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Environmental Information
Other Related Documents
PCN Packaging
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFS3307ZTRRPBF is a surface-mount N-channel MOSFET produced by Infineon Technologies, designed for high efficiency and performance. It operates at a maximum voltage of 75V and a current of 120A when case temperature is optimal. The device is encapsulated in a TO-263 (D2PAK) package, offering a power dissipation capacity of up to 230W. With a threshold voltage of 10V and a gate-source cut-off voltage of 4V at 150µA, this MOSFET is well-suited for demanding applications where significant current capacity and thermal management are required.
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