IRFR9024NTRPBFP-Channel 55 V 11A (Tc) 38W (Tc) Surface Mount TO-252AA (DPAK)
1:$0.8040
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ABRmicro #.ABR2045-IRFR90-938014
ManufacturerInfineon Technologies
MPN #.IRFR9024NTRPBF
Estimated Lead Time10 Weeks
SampleGet Free Sample
Datasheet
IRFR9024NPbF, IRFU9024NPbF(PDF)
IRFR9024NPbF, IRFU9024NPbF(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 0.8040
Ext. Price$ 0.8040
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.8040$0.8040
10$0.6530$6.5340
100$0.5090$50.8940
500$0.4310$215.6880
1000$0.3520$351.6880
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIRFR9024
Continuous Drain Current (ID) @ 25°C11A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)19 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)350 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation38W (Tc)
RDS(on) Drain-to-Source On Resistance175mOhm @ 6.6A, 10V
Package Type (Mfr.)TO-252AA (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental Information
Other Related Documents
PCN Design/Specification
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFR9024NTRPBF is a P-Channel MOSFET manufactured by Infineon Technologies, designed for efficient power switching applications. It features a voltage rating of 55 V and can handle a continuous current of 11A under controlled conditions, while dissipating up to 38W of power. Configured in a compact TO-252AA (DPAK) surface mount package, this MOSFET provides low on-state resistance and fast switching speeds. It requires a gate-source threshold voltage of 10V and exhibits a gate charge of 350 pF at 25 V and 4V at 250µA. This device is intended to serve various electronic designs requiring P-channel functionality with moderate power handling capabilities.
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