Image is for reference only, the actual product serves as the standard.
IRFR5305PBFP-Channel 55 V 31A (Tc) 110W (Tc) Surface Mount TO-252AA (DPAK)

N/A

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IRFR53-965991
MPN #.IRFR5305PBF
Estimated Lead Time-
SampleGet Free Sample
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 6
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
IGBT Module Trench Field Stop Three Phase Inverter 650 V 40 A 20 mW Chassis Mount AG-EASY2B-2
N-Channel 650 V 26A (Tc) 96W (Tc) Through Hole PG-TO247-3-41
N-Channel 650 V 59A (Tc) 189W (Tc) Through Hole PG-TO247-4-3
N-Channel 650 V 25A (Tc) 32W (Tc) Through Hole PG-TO220-FP
N-Channel 600 V 3.6A (Tc) 22W (Tc) Surface Mount PG-TO252-3-344
N-Channel 650 V 4.7A (Tc) 26W (Tc) Through Hole PG-TO251-3
N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3
Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolescence Review In Progress
Continuous Drain Current (ID) @ 25°C31A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)63 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1200 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation110W (Tc)
RDS(on) Drain-to-Source On Resistance65mOhm @ 16A, 10V
Package Type (Mfr.)TO-252AA (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFR5305PBF is a P-Channel MOSFET designed by Infineon Technologies. It features a maximum voltage of 55 V and can handle a continuous current of 31A when properly mounted. The device delivers a power dissipation of 110W under similar conditions, indicating its capability to manage significant electrical loads. Housed in a TO-252AA (DPAK) surface mount package, this MOSFET offers a low on-resistance of 65 mOhm at a gate-source voltage of 10V and a drain current of 16A. It also has a total gate charge of 1200 pF when at a drain-source voltage of 25 V. This combination of characteristics makes it suitable for various standard applications requiring efficient power management and switching.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.