IRFR4510PBFN-Channel 100 V 56A (Tc) 143W (Tc) Surface Mount TO-252AA (DPAK)
N/A
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IRFR45-1018005
ManufacturerInfineon Technologies
MPN #.IRFR4510PBF
Estimated Lead Time-
SampleGet Free Sample
Datasheet
IRFR/U4510PbF(PDF)
IRFR/U4510PbF(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 10
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
FS3L40R07W2H5FB11BOMA1$77.5420
IGBT Module Trench Field Stop Three Phase Inverter 650 V 40 A 20 mW Chassis Mount AG-EASY2B-2
IMW65R072M1HXKSA1$8.2660
N-Channel 650 V 26A (Tc) 96W (Tc) Through Hole PG-TO247-3-41
IMZA65R027M1HXKSA1$15.4470
N-Channel 650 V 59A (Tc) 189W (Tc) Through Hole PG-TO247-4-3
IPAN60R125PFD7SXKSA1$2.2480
N-Channel 650 V 25A (Tc) 32W (Tc) Through Hole PG-TO220-FPIPD60R1K5PFD7SAUMA1$0.6420
N-Channel 600 V 3.6A (Tc) 22W (Tc) Surface Mount PG-TO252-3-344
IPS60R1K0PFD7SAKMA1$0.3040
N-Channel 650 V 4.7A (Tc) 26W (Tc) Through Hole PG-TO251-3
IPS60R210PFD7SAKMA1$0.6960
N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolescence Review In Progress
Continuous Drain Current (ID) @ 25°C56A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)81 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3031 pF @ 50 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation143W (Tc)
RDS(on) Drain-to-Source On Resistance13.9mOhm @ 38A, 10V
Package Type (Mfr.)TO-252AA (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 100µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
Other Related Documents
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFR4510PBF, manufactured by Infineon Technologies, is an N-Channel MOSFET designed for surface mount applications. It is capable of handling a drain-source voltage of up to 100 volts and a continuous current of 56 amps when the device's case temperature is maintained at specified limits. The power dissipation capability of this component is rated at 143 watts under similar thermal conditions. Its physical configuration is encapsulated in the TO-252AA (DPAK) package. Key electrical characteristics include a gate charge capacitance of 3031 pF at 50 volts and an on-state resistance of 13.9 milliohms when a gate-source voltage of 10 volts is applied, allowing a current of 38 amps to flow. The device can withstand gate-source voltages up to ±20 volts, providing robust performance in various applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.