IRFR3910TRPBFN-Channel 100 V 16A (Tc) 79W (Tc) Surface Mount TO-252AA (DPAK)
1:$0.9230
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ABRmicro #.ABR2045-IRFR39-1024810
ManufacturerInfineon Technologies
MPN #.IRFR3910TRPBF
Estimated Lead Time10 Weeks
SampleGet Free Sample
Datasheet
IRFR3910PbF, IRFU3910PbF(PDF)
IRFR3910PbF, IRFU3910PbF(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 0.9230
Ext. Price$ 0.9230
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.9230$0.9230
10$0.7520$7.5230
100$0.5850$58.5440
500$0.4960$248.0940
1000$0.4050$404.8130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIRFR3910
Continuous Drain Current (ID) @ 25°C16A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)44 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)640 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation79W (Tc)
RDS(on) Drain-to-Source On Resistance115mOhm @ 10A, 10V
Package Type (Mfr.)TO-252AA (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Design Resources
Environmental Information
Other Related Documents
PCN Design/Specification
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFR3910TRPBF is an N-Channel MOSFET from Infineon Technologies, designed for efficient power switching applications. It operates with a maximum drain-source voltage of 100 V and can handle a current up to 16 A at the case temperature. This device has a power dissipation of 79 W at the case temperature and comes in a TO-252AA (DPAK) surface-mount package. It exhibits an on-state resistance of 115 milliohms when driven with a gate voltage of 10 V and a current of 10 A. Additionally, the MOSFET has a typical input capacitance of 640 pF at 25 V, making it suitable for high-speed switching tasks.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.