IRFR3711ZCTRPBFN-Channel 20 V 93A (Tc) Surface Mount TO-252AA (DPAK)
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ABRmicro #.ABR2045-IRFR37-955936
ManufacturerInfineon Technologies
MPN #.IRFR3711ZCTRPBF
Estimated Lead Time-
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Datasheet
IRF(R,U)3711ZCPBF(PDF)
IRF(R,U)3711ZCPBF(PDF)
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Packaging
Cut Tape (CT)
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
Series-
Packaging
Cut Tape (CT)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C93A (Tc)
Drain-to-Source Voltage (VDS)20 V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)27 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2160 pF @ 10 V
MfrInfineon Technologies
Mounting StyleSurface Mount
RDS(on) Drain-to-Source On Resistance5.7mOhm @ 15A, 10V
Package Type (Mfr.)TO-252AA (DPAK)
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.45V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFR3711ZCTRPBF is a high-performance N-Channel MOSFET manufactured by Infineon Technologies, designed for efficient power management in compact form factors. It offers a 20 V breakdown voltage and 93A current capacity at Tc with a low on-resistance of 5.7 mOhm at 15A and 10V. Encased in a TO-252AA (DPAK) surface mount package, it features a total gate charge of 2160 pF at 10 V, facilitating fast switching and minimal energy loss. This MOSFET is suitable for applications requiring compact and reliable components with robust thermal and electrical parameters.
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