IRFR3710ZPBFN-Channel 100 V 42A (Tc) 140W (Tc) Surface Mount TO-252AA (DPAK)
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ABRmicro #.ABR2045-IRFR37-965456
ManufacturerInfineon Technologies
MPN #.IRFR3710ZPBF
Estimated Lead Time-
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Datasheet
IRFR3710ZPbF, IRFU3710ZPbF(PDF)
IRFR3710ZPbF, IRFU3710ZPbF(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C42A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)100 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2930 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation140W (Tc)
RDS(on) Drain-to-Source On Resistance18mOhm @ 33A, 10V
Package Type (Mfr.)TO-252AA (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFR3710ZPBF is an N-Channel MOSFET manufactured by Infineon Technologies, designed for surface-mount applications housed in a TO-252AA (DPAK) package. It operates with a drain-to-source voltage of 100 V and can handle a continuous drain current of 42A at a case temperature of 25°C. The device exhibits an on-state resistance of 18 milliohms when driven with a gate-to-source voltage of 10V and a drain current of 33A. It features a total gate charge of 100 nC at 10V, supporting efficient switching performance, and can dissipate up to 140W of power at the case temperature limit, making it suitable for high-power applications.
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