IRFR3706TRLN-Channel 20 V 75A (Tc) 88W (Tc) Surface Mount TO-252AA (DPAK)
N/A
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ABRmicro #.ABR2045-IRFR37-966562
ManufacturerInfineon Technologies
MPN #.IRFR3706TRL
Estimated Lead Time-
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Datasheet
IRFR3706, IRFU3706(PDF)
IRFR3706, IRFU3706(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C75A (Tc)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2.8V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)35 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2410 pF @ 10 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation88W (Tc)
RDS(on) Drain-to-Source On Resistance9mOhm @ 15A, 10V
Package Type (Mfr.)TO-252AA (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±12V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFR3706TRL is an N-Channel MOSFET manufactured by Infineon Technologies, designed for surface mounting in a TO-252AA (DPAK) package. It is capable of handling a voltage of 20V and a continuous current of up to 75A when using a suitable heat sink. The device features a maximum power dissipation of 88W under optimal thermal control. With a gate threshold voltage tolerance of ±12V and a total gate charge of 35 nC at 4.5V, it is engineered for efficient switching performance in various electronic applications.
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