IRFR3418TRLPBFN-Channel 80 V 70A (Tc) 3.8W (Ta), 140W (Tc) Surface Mount TO-252AA (DPAK)
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ABRmicro #.ABR2045-IRFR34-919967
ManufacturerInfineon Technologies
MPN #.IRFR3418TRLPBF
Estimated Lead Time-
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Datasheet
IRFR3418PbF, IRFU3418PbF(PDF)
IRFR3418PbF, IRFU3418PbF(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C70A (Tc)
Drain-to-Source Voltage (VDS)80 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)94 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3510 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.8W (Ta), 140W (Tc)
RDS(on) Drain-to-Source On Resistance14mOhm @ 18A, 10V
Package Type (Mfr.)TO-252AA (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5.5V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFR3418TRLPBF is an N-Channel MOSFET produced by Infineon Technologies, designed for surface-mount applications in a TO-252AA (DPAK) package. It supports a maximum drain-source voltage of 80V and can handle a continuous drain current of up to 70A at a case temperature (Tc). The part exhibits a low on-resistance of 14 milliohms at 18A and 10V, making it efficient for power management. With a total gate charge of 94 nanocoulombs at a gate-source voltage of 10V, this MOSFET ensures rapid switching performance. It is characterized by a power dissipation rating of 3.8W when mounted on a standard PCB and 140W at Tc, facilitating effective thermal management in high-power applications.
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