IRFR3410TRLPBFN-Channel 100 V 31A (Tc) 3W (Ta), 110W (Tc) Surface Mount TO-252AA (DPAK)
1:$0.9560
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IRFR34-920386
ManufacturerInfineon Technologies
MPN #.IRFR3410TRLPBF
Estimated Lead Time10 Weeks
SampleGet Free Sample
Datasheet
IRFR3410, IRFU3410(PDF)
IRFR3410, IRFU3410(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 5943
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 0.9560
Ext. Price$ 0.9560
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.9560$0.9560
10$0.7820$7.8200
100$0.6080$60.7750
500$0.5150$257.6560
1000$0.4200$419.6880
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
FS3L40R07W2H5FB11BOMA1$77.5420
IGBT Module Trench Field Stop Three Phase Inverter 650 V 40 A 20 mW Chassis Mount AG-EASY2B-2
IMW65R072M1HXKSA1$8.2660
N-Channel 650 V 26A (Tc) 96W (Tc) Through Hole PG-TO247-3-41
IMZA65R027M1HXKSA1$15.4470
N-Channel 650 V 59A (Tc) 189W (Tc) Through Hole PG-TO247-4-3
IPAN60R125PFD7SXKSA1$2.2480
N-Channel 650 V 25A (Tc) 32W (Tc) Through Hole PG-TO220-FPIPD60R1K5PFD7SAUMA1$0.6420
N-Channel 600 V 3.6A (Tc) 22W (Tc) Surface Mount PG-TO252-3-344
IPS60R1K0PFD7SAKMA1$0.3040
N-Channel 650 V 4.7A (Tc) 26W (Tc) Through Hole PG-TO251-3
IPS60R210PFD7SAKMA1$0.6960
N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIRFR3410
Continuous Drain Current (ID) @ 25°C31A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)56 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1690 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3W (Ta), 110W (Tc)
RDS(on) Drain-to-Source On Resistance39mOhm @ 18A, 10V
Package Type (Mfr.)TO-252AA (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
Design Resources
Environmental Information
Other Related Documents
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFR3410TRLPBF is an N-channel MOSFET manufactured by Infineon Technologies, designed for surface mount applications. It operates at a maximum voltage of 100 V and can handle continuous currents up to 31A at the case temperature (Tc), with a power dissipation of 3W at ambient temperature (Ta) and 110W at Tc. It features a gate charge of 56 nC at 10 V and a capacitance of 1690 pF at 25 V. Encased in a TO-252AA (DPAK) package, this MOSFET is a versatile component suited for efficient energy transfer in various electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.