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IRFR2405TRRN-Channel 55 V 56A (Tc) 110W (Tc) Surface Mount TO-252AA (DPAK)
N/A
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ABRmicro #.ABR2045-IRFR24-1036378
ManufacturerInfineon Technologies
MPN #.IRFR2405TRR
Estimated Lead Time-
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DatasheetIRFR2405, IRFU2405(PDF)
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In Stock: 6
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 17, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberIRFR2405
Continuous Drain Current (ID) @ 25°C56A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)110 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2430 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation110W (Tc)
RDS(on) Drain-to-Source On Resistance16mOhm @ 34A, 10V
Package Type (Mfr.)TO-252AA (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFR2405TRR is an N-Channel MOSFET manufactured by Infineon Technologies, designed for power management applications. It features a maximum drain-source voltage of 55 volts and can handle currents up to 56 amps when properly mounted and cooled, with a power dissipation of 110 watts. Encased in a compact TO-252AA (DPAK) surface-mount package, this MOSFET offers a total gate charge of 110 nC at 10 volts and boasts an input capacitance of 2430 pF at 25 volts, ensuring efficient switching performance in various electronic designs.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.