IRFR18N15DN-Channel 150 V 18A (Tc) 110W (Tc) Surface Mount TO-252AA (DPAK)
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ABRmicro #.ABR2045-IRFR18-999008
ManufacturerInfineon Technologies
MPN #.IRFR18N15D
Estimated Lead Time-
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Datasheet
IRFR18N15D, IRFU18N15D(PDF)
IRFR18N15D, IRFU18N15D(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C18A (Tc)
Drain-to-Source Voltage (VDS)150 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)43 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)900 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation110W (Tc)
RDS(on) Drain-to-Source On Resistance125mOhm @ 11A, 10V
Package Type (Mfr.)TO-252AA (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5.5V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFR18N15D is a surface-mount N-channel MOSFET manufactured by Infineon Technologies, featuring a maximum voltage rating of 150V and a current handling capability of 18A at the case temperature (Tc). It is housed in a TO-252AA (DPAK) package and is designed to dissipate up to 110W of power at Tc. This MOSFET has a gate threshold voltage requirement of 10V and a total gate charge of 43 nC at that voltage, making it suitable for efficient switching applications in its voltage and current range.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.