IRFR15N20DTRPBFN-Channel 200 V 17A (Tc) 3W (Ta), 140W (Tc) Surface Mount TO-252AA (DPAK)
1:$1.1630
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ABRmicro #.ABR2045-IRFR15-1002046
ManufacturerInfineon Technologies
MPN #.IRFR15N20DTRPBF
Estimated Lead Time10 Weeks
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Datasheet
IRF(R,U)15N20DPbF(PDF)
IRF(R,U)15N20DPbF(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.1630
Ext. Price$ 1.1630
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.1630$1.1630
10$0.9540$9.5410
100$0.7420$74.1630
500$0.6280$313.9690
1000$0.5120$512.1250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIRFR15
Continuous Drain Current (ID) @ 25°C17A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)41 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)910 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3W (Ta), 140W (Tc)
RDS(on) Drain-to-Source On Resistance165mOhm @ 10A, 10V
Package Type (Mfr.)TO-252AA (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5.5V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental Information
Other Related Documents
PCN Design/Specification
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFR15N20DTRPBF is an N-channel MOSFET produced by Infineon Technologies, designed for efficient switching and amplification purposes. It can handle a drain-source voltage of up to 200 V and a continuous drain current of 17A at the case temperature (Tc). The device is capable of dissipating up to 140W of power at Tc and 3W in ambient conditions (Ta). This MOSFET features a gate-source voltage tolerance of ±30V and demonstrates a gate charge voltage of 5.5V at 250µA. Its input capacitance is approximately 910 pF at 25 V, and it comes in a compact TO-252AA (DPAK) surface mount package, making it suitable for space-constrained applications.
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