IRFR12N25DN-Channel 250 V 14A (Tc) 144W (Tc) Surface Mount TO-252AA (DPAK)
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ABRmicro #.ABR2045-IRFR12-987280
ManufacturerInfineon Technologies
MPN #.IRFR12N25D
Estimated Lead Time-
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Datasheet
IRFR12N25D, IRFU12N25D(PDF)
IRFR12N25D, IRFU12N25D(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C14A (Tc)
Drain-to-Source Voltage (VDS)250 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)35 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)810 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation144W (Tc)
RDS(on) Drain-to-Source On Resistance260mOhm @ 8.4A, 10V
Package Type (Mfr.)TO-252AA (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFR12N25D is an N-channel MOSFET manufactured by Infineon Technologies, designed to handle a maximum voltage of 250 volts and a current of 14 amperes under specified conditions. This surface-mount component, housed in a TO-252AA (DPAK) package, has a power dissipation capacity of 144 watts. Featuring a gate charge of 35 nanocoulombs at 10 volts and a threshold voltage of 5 volts at a 250 microampere current, this MOSFET is built for efficient switching performance in various electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.