IRFR1010ZTRLPBFN-Channel 55 V 42A (Tc) 140W (Tc) Surface Mount TO-252AA (DPAK)
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ABRmicro #.ABR2045-IRFR10-984958
ManufacturerInfineon Technologies
MPN #.IRFR1010ZTRLPBF
Estimated Lead Time-
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Datasheet
IRFR1010Z, IRFU1010Z(PDF)
IRFR1010Z, IRFU1010Z(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberIRFR1010
Continuous Drain Current (ID) @ 25°C42A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)95 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2840 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation140W (Tc)
RDS(on) Drain-to-Source On Resistance7.5mOhm @ 42A, 10V
Package Type (Mfr.)TO-252AA (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 100µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFR1010ZTRLPBF is an N-channel MOSFET manufactured by Infineon Technologies, featured in a surface-mount TO-252AA (DPAK) package. This component is capable of handling a maximum drain-source voltage of 55V and a current of up to 42A at a case temperature of 25°C. It features a power dissipation of 140W under standard conditions and supports a gate-to-source voltage of ±20V. The device achieves a turn-on threshold voltage with a gate-source voltage of 4V at a test current of 100µA, making it suitable for high-efficiency power management applications.
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