IRFPS3810PBFN-Channel 100 V 170A (Tc) 580W (Tc) Through Hole SUPER-247™ (TO-274AA)
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ABRmicro #.ABR2045-IRFPS3-1001508
ManufacturerInfineon Technologies
MPN #.IRFPS3810PBF
Estimated Lead Time-
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Datasheet
IRFPS3810PbF(PDF)
IRFPS3810PbF(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C170A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)390 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6790 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation580W (Tc)
RDS(on) Drain-to-Source On Resistance9mOhm @ 100A, 10V
Package Type (Mfr.)SUPER-247™ (TO-274AA)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-274AA
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFPS3810PBF is a robust N-channel MOSFET manufactured by Infineon Technologies, designed to operate with a maximum voltage rating of 100 V and a current capacity up to 170A when appropriately cooled. It features a low on-state resistance of 9mOhm at a current of 100A and a gate-source voltage of 10V, making it efficient for high-current applications. The device is housed in a SUPER-247™ (TO-274AA) through-hole package, providing ease of heat dissipation and mechanical stability. Additionally, this MOSFET presents a respectable input capacitance of 6790 pF at 25 V, indicating its capability to handle fast switching operations efficiently. The component also allows for a gate-source threshold voltage operation of 5V at a drain current of 250µA, further demonstrating its flexibility in varied electronic circuits.
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