IRFP4332-203PBFN-Channel 250 V 57A (Tc) 360W (Tc) Through Hole TO-247AC
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ABRmicro #.ABR2045-IRFP43-962097
ManufacturerInfineon Technologies
MPN #.IRFP4332-203PBF
Estimated Lead Time-
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Datasheet
IRFP4332PBF(PDF)
IRFP4332PBF(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C57A (Tc)
Drain-to-Source Voltage (VDS)250 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)150 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5860 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)
Maximum Power Dissipation360W (Tc)
RDS(on) Drain-to-Source On Resistance33mOhm @ 35A, 10V
Package Type (Mfr.)TO-247AC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-247-3
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFP4332-203PBF is an N-channel MOSFET manufactured by Infineon Technologies. It features a voltage rating of 250 V and a continuous current capability of 57 A when properly mounted on a heat sink. The MOSFET is housed in a TO-247AC through-hole package, which facilitates easy mounting and accurate alignment in power applications. It has a power dissipation of up to 360 W, indicating its ability to handle substantial power loads. The device exhibits a gate charge of 150 nC at 10 V, ensuring efficient switching performance, and a capacitance of 5860 pF at 25 V. Additionally, it can tolerate gate-to-source voltages of up to ±30 V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.