IRFP4310ZPBFN-Channel 100 V 120A (Tc) 280W (Tc) Through Hole TO-247AC
1:$3.4790
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IRFP43-1003777
ManufacturerInfineon Technologies
MPN #.IRFP4310ZPBF
Estimated Lead Time12 Weeks
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Datasheet
IRFP4310ZPBF(PDF)
IRFP4310ZPBF(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 3.4790
Ext. Price$ 3.4790
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$3.4790$3.4790
25$2.7580$68.9560
100$2.3640$236.4060
500$2.1010$1050.2810
1000$1.7990$1798.8130
2000$1.6940$3387.2500
5000$1.6250$8122.8130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIRFP4310
Continuous Drain Current (ID) @ 25°C120A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)170 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6860 pF @ 50 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation280W (Tc)
RDS(on) Drain-to-Source On Resistance6mOhm @ 75A, 10V
Package Type (Mfr.)TO-247AC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 150µA
Package / CaseTO-247-3
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Datasheets
Environmental Information
Other Related Documents
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFP4310ZPBF, manufactured by Infineon Technologies, is a robust N-Channel MOSFET designed for high power efficiency and performance. It features a voltage rating of 100 V and is capable of carrying up to 120 A in optimal conditions, with a substantial power dissipation of 280 W when mounted through-hole on a TO-247AC package. The gate charge is specified at 170 nC at a gate-source voltage of 10 V, enabling efficient switching. Additionally, it achieves a threshold voltage of 4 V at a drain current of 150 µA. This MOSFET is suited for demanding environments due to its capacity for high current and power handling.
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