IRFP4137PBFN-Channel 300 V 38A (Tc) 341W (Tc) Through Hole TO-247AC
1:$4.7440
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ABRmicro #.ABR2045-IRFP41-939313
ManufacturerInfineon Technologies
MPN #.IRFP4137PBF
Estimated Lead Time-
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Datasheet
IRFP4137PbF(PDF)
IRFP4137PbF(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 4.7440
Ext. Price$ 4.7440
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$4.7440$4.7440
25$3.7600$94.0050
100$3.2240$322.3630
500$2.8660$1432.7810
1000$2.4530$2453.3130
2000$2.3100$4619.7500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberIRFP4137
Continuous Drain Current (ID) @ 25°C38A (Tc)
Drain-to-Source Voltage (VDS)300 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)125 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5168 pF @ 50 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation341W (Tc)
RDS(on) Drain-to-Source On Resistance69mOhm @ 24A, 10V
Package Type (Mfr.)TO-247AC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-247-3
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFP4137PBF, manufactured by Infineon Technologies, is an N-Channel MOSFET designed for high power applications. It operates at a maximum voltage of 300V and a continuous current of 38A (measured at the case, Tc). The device is contained in a TO-247AC through-hole package, capable of dissipating up to 341W of power under specific conditions. It has a gate-source voltage tolerance of ±20V and features a gate charge of 5V given at 250µA. The input capacitance is specified at 5168 pF when measured at 50V, contributing to its ability to handle high power switching tasks efficiently.
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